Resistivity of doped silicon formula Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon This paper [1], together with its companion [2], Resistivity-Dopant Density Relationship for Boron-Doped Silicon, documents the work done from about 1975 to 1980 to obtain a more accurate relationship between the resistivity and dopant density of silicon. Amorphous p-type silicon film was grown on top of amorphous intrinsic thin silicon layer. Substituting the values into the resistivity formula:? = 1 / (1. Boron doped thin layers of The ability to modulate silicon's properties is one of the reasons that enable modern transistor technology. 8 mm (2 in) diameter silicon with the resistivity values in each set having been chosen to serve a particular application need in the silicon semiconductor industry Undoped silicon (aka intrinsic silicon) will likely have an intrinsic resistivity of around 250,000Ω-cm at room temperature, of which 90% comes from the conductivity of conduction band electrons (rather than holes). The resistivity of a doped silicon crystal is 9. For intrinsic (undoped) silicon, the resistivity is typically in the range of 1,000 to 10,000 ohm-cm. Jun 1, 2022 · The resistivity, and thus the electrical properties of silicon can be precisely engineered and tailored to specifications by adding small amounts of group III or V atoms to the silicon crystal lattice. 6 x 10^-19 C * 1018 cm^-3 * 1500 cm^2/Vs) Calculating this expression will yield the room-temperature resistivity of the n-type silicon doped with 1018 phosphorus atoms/cm3. e. From the EDS analysis, doping concentration Jun 10, 2021 · However, for a semiconductor to help electronic circuits, its resistivity (the reciprocal of conductivity) must be between 1 or 2 orders of magnitude of 10ˉ² ohm-m at 26. Theory of hole mobility and resistivity in boron doped silicon Acknowledgements-The author would like to express his special 13, thanks to Dr. MaxR: the maximum resistivity value of the tested silicon ingot Prob. Temperature. We validated this de-embedding method applying it to two doping profiling samples with known doping and resistivity Oct 26, 2023 · It uses ASTM formulae to convert between doping and resistivity for silicon, allowing users to select type (n/p) and enter a value for one parameter and set the other. Solar Cell Design Principles; SemiconductorMeasurementTechnology: TheRelationshipBetweenResistivity andDopantDensityforPhosphorus- andBoron-DopedSilicon W. The resistivity was obtained by the van der … Expand In the metallic state, silicon doped with boron at very high doping is superconducting4. By applying a known current Aug 1, 2013 · Resistivity of boron-doped polycrystalline-silicon (polysilicon) film was investigated experimentally with wide range of doping concentration (5×10<sup>18</sup>~1. 8 × 1014–7. Because of this, it is important to know how to convert the dopant density to In a four-point probe measurement on a silicon wafer that is uniformly doped n-type, the measured resistance is 40 Ω. The results were further optimised after Approx. Find the mobility and density of the charge carriers, assuming single carrier conduction. 2. Determine the built-in potential (in electron volts), depletion width (in micrometers), and capacitance (in farads per square centimeter, F/cm2 ). A 3 × 3 cm 2 heavily doped Si (boron doped, electrical resistivity <0. In silicon that has been doped with re-entrant logarithmic increase in resistivity below a Special Publication 400-64, The Relationship Between Resistivity and Dopant Density for Phosphorus-and Boron-Doped Silicon (May 1981), Table 10, Page 34 and Table 14, Page 40. The resistivity of the as−deposited films was widely scattered but independent of dopant atom concentration at the lightly doped levels and was strong function of Jan 1, 2004 · The static dielectric constant of the heavily doped silicon at room temperature is considered. 7%, and 3. Oct 1, 1980 · New data for the resistivity‐dopant density relationship for boron‐doped silicon have been obtained for boron densities between 10 14 and 10 20 cm −3 and temperatures of 296°K (23°C) and 300°K. For a uniformly doped layer, the sheet resistivity is defined as: $$\rho_{\square}=\frac{\rho}{t}$$ where ρ is the resistivity of the layer; and t is the thickness of the layer. It is also generally accepted that the existence of heavy doping effects in silicon strongly affects the behavior of all bipolar devices. Origins of conductivity. Boron doped thin layers of Dec 5, 2006 · The electrical resistivity of 4H-SiC doped with nitrogen is analyzed in the temperature range 10-700 K for nitrogen concentrations between 3. The net doping density, N A-N D, of several p-type compensated mc-Si ingots with different contents of B and P has been independently Temperature dependence of resistivity from 250 to 900 K in p-type 4H-SiC with various doping concentrations (5. Doping is a process that introduces impurities into a semiconductor to control its properties. Dec 1, 2022 · However, due to high segregation of phosphorus in silicon melt, crystallized ingots have higher variation of resistivity along ingot's height compared to boron-doped crystals. However, when doped (i. Referenced SEMI Standards (purchase separately) SEMI M59 — Terminology for Silicon Figuring out how much doping is in a silicon base isn't straightforward; it needs several methods, each giving us a unique look into the amount and kind of dopants hanging out inside the silicon. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced. Jun 29, 2018 · Download figure: Standard image High-resolution image Figure 2(a) shows the dependence of resistivity on Al doping concentration at 293, 485, and 900 K. Fluorine was found to block the access of hydrogen to the dangling bonds. A low resistivity indicates a material that readily allows the flow of electric current. 0 × 10 16 cm −3) increased at high temperatures because almost all acceptors are ionized, while the mobility decreases due to enhanced phonon scattering. 4. The black, blue, and red circles denote the experimental values at 293, 485, and In the intermediate resistivity range, the temperature coefficient for aluminum-doped silicon is less than that for boron-doped silicon. 8%, 4. Boron has only three valence electrons, and "borrows" one from the Si lattice, creating a doped with donor atoms. Today: 1. Semiconductors under applied electric field. This is because substrates of high resistivity resulting high series resistance can lower the fill factor (FF), while low resistivity resulting low carrier lifetime can lower the short Jul 3, 2021 · The effect of varying silicon material resistivity (1. Then, the radial resistivity variation measurement is through the formula: (MaxR – MinR)/MinR. We hope you find the following chart useful. 0 × 10 15 to 1. As a result, a record efficiency of 26. Measurements have been made of the temperature dependences of the electrical resistivity and Hall coefficient in samples of n‐ and p‐type silicon having impurity concentrations in the 10 18 to 10 20 cm −3 range. It is shown that the polysilicon Doped silicon resistivity refers to how strongly doped silicon opposes the flow of electric current. Arsenic and Phosphorus provide electron mobilities, Boron provides hole mobility. We use the Apr 24, 2017 · Consequently, phosphorus-doped silicon fails to meet the resistivity demand for the silicon substrate of solar cells which is suggested among in the crystal . Impurities in semiconductors. The Role of Doping. W. 1 2 The design of resistors in bipolar circuits is often based on resistivities around 1000 Ω/ . At very large doping levels (=10 2 0 cm − 3), the resistivity is comparable to that of crystalline silicon though slightly higher. The effects from this anisotropy on the impurity contribution are fully taken into account as well. 0001 and 100000. Resistivity (for doping > 10 12) n-type: ohm cm p-type: ohm cm: Christiana Jul 18, 2021 · Searching around for the resistivity of p and n silicon, so far I can only find data such as this: image source. Specifically, the sheet resistance, in the range from 1 kΩ/ to 100 Ω/ for a doping level of 10 19 cm-3 to 10 20 cm-3, is characterized over temperatures from 300 to 450 K. Determine resistivity of n-type silicon, doped with 5e14 cm−3 donor atoms. In the intrinsic regime at higher temperatures, the carrier concentrations increase more rapidly with temperature than the mobility decreases so the conductivity increases in the high The Mg-delta-doped AlxGa1-xN (x~0. T. In this scenario, we have silicon with a donor (ND) concentration of 10¹⁸cm⁻³ at room temperature, where the intrinsic carrier concentration (ni) is 1. Replacing Si with an element from Column III (such as boron) creates a hole in the valence band. 5 Ωcm) and temperature (300-420 K) on grain size was also analysed using the impedance spectra. Jan 1, 2004 · The static dielectric constant of the heavily doped silicon at room temperature is considered. . What I want to know is the resistivity at operating temperatures. It is stated that this procedure enables to establish calculated drift mobility bulk values for these temperatures. Thurber,R. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties. \(n\) is the electron density, given by: Dec 5, 2006 · The electrical resistivity of 4H-SiC doped with nitrogen is analyzed in the temperature range 10-700 K for nitrogen concentrations between 3. Find step-by-step Engineering solutions and the answer to the textbook question The resistivity $$ \rho $$ of doped silicon is based on the charge q on an electron, the electron density n, and the electron mobility µ. Notice it says "Room Temperature Silicon". 0 × 1016 cm−3) increased at high temperatures because almost all The energy structure of a semiconductor can be altered by substituting one type of atom with another (doping). 0032 -cm and 0. M. 08×10¹⁰cm⁻³. Material inputs. It's a critical property for semiconductor devices. R. Assuming that the conduction is by a single type of charge carriers, calculate the density and mobility of the carrier. Wafer-to-wafer resistivity variation is a concern for industrial solar cell manufacturing, since it makes the selection of optimal parameters for achieving the maximum process used for n-type doping, and thus, will be introducing additional electrons into the lattice structure. Enter a number between For example, in n-type materials, the doping density is quite low, and the electron-electron interaction decreases with increasing doping density. Resistivity (for doping > 10 12) n-type: ohm cm p-type: (using PSA formula) Airmass units Design of Silicon Cells. 6. More current flows in heavily doped regions; less current in lightly doped areas. Doped silicon wafers can have resistivities as low as 0. 1% (Haase et al. 4mm/ 1mm sinh(0. 7: Semiconductors and Doping - Physics LibreTexts Doping of a pure silicon array. Figure 2(a) shows the dependence of resistivity on Al doping concentration at 293, 485, and 900K. Design of Silicon Cells; 6. L Resistivity of boron-doped LPCVD polysilicol1 vs boron implant dose (and boron doping concentration). Liu Download scientific diagram | Comparison of experimental values of resistivity versus doping concentration with the simulated values using the conduction channel model and TE–TFE–TFES model. The electrical resistivity of polycrystalline silicon films has been studied as a function of doping concentration and heat treatment. 23 x 10-3 ohm m and the Hall coefficient is 3. 2269 ⇢ = R · t g 4 Jul 1, 2022 · By comparing the obtained thermal conductivity of Si with different doping elements and doping concentrations in Fig. The direct-current resistivity was measured at temperatures from 300' to 1200' K. 4, we can see that: (1) with the heaviest doping (∼10 19 cm-3), the thermal conductivity of both B-doped and P-doped Si decreased to about 110 W/(m·K), approximately 22% lower than that of pure Si; (2) for the case of Experimental values of resistivity measured in a temperature range 300 to 600 K are compared with those calculated. The intrinsic resistivity of germanium and silicon has limited utility in electronic circuits (47∙10ˉ² and 2. There might be 5 x 10^22 silicon atoms per cm3, yielding 1. Within a neutron flux, and particularly with However, a value known as the "sheet resistivity", which depends on both the resistivity and the thickness, can be readily measured for the top surface n-type layer. Resis… 1E12 1E13 1E14 1E15 1E16 1E17 1E18 1E19 1E-2 1E-1 1E0 1E1 1E2 1E3 1E4 1E5 Impurity Concentration Resistivity (Ohm-cm) Jan 14, 2020 · Given that the mobility of electrons and holes in silicon is given by equations 1 and 2, I'm trying to find the resistivity of a sample which has been doped with a donor density of: To calculate silicon carrier concentration values, we use carrier mobility values derived from Thurber, Mattis, Liu, and Filliben, National Bureau of Standards Special Publication 400-64, The Relationship Between Resistivity and Dopant Density for Phosphorus-and Boron-Doped Silicon (May 1981), Table 10, Page 34 and Table 14, Page 40. The electron density is given in terms of the doping density N and the intrinsic carrier density ni. 6 x 10^10 conduction band electrons per cm3, with an average mobility Sep 12, 2023 · The conductivity (σ) and resistivity (ρ) of silicon depend on its carrier concentration, which can be modified through doping. 6 x 10-19 coulomb Electron mobility=0. Properties of Silicon as a Function of Doping (300 K) Carrier mobility is a function of carrier type and doping level. 52 x 101/cm3 Electron charge=1. , 2018 The crystal is n-doped, meaning that the majority carrier (electron) is negatively charged. Manufacturing Si Cells; 7. Bullis for his critical review of the manus- 14, cript and for his valuable comments. Customer Service; Product formula for the doping concentration dependence of resis- Dependence of resistivity on doping concentration. In order to better expression the mechanical properties of monocrystalline silicon doping system, the elastic constants C i j and elastic compliance matrix S i j of monocrystalline silicon doping system were obtained using the strain-stress Apr 1, 2022 · Resistivity tailing seriously reduces the production of phosphorus-doped n-type cast mono-like silicon (CM-Si) ingots and increases costs. Evanescent states inside the bandgap. Keywords: Static dielectric constant, Heavily doped silicon, Room temperature. The two basic but important properties of doped silicon are mobility and resistivity. By using phosphorus as an example, the existing expression for the static dielectric constant at low Sep 1, 2006 · One of the key benefits of using polysilicon as the material for resistors and piezoresistors is that the temperature coefficient of resistivity (TCR) can be tailored to be negative, zero, or Abstract: Electrical conduction data from heavily doped p-type polysilicon thin films at room temperature and above are presented. Carrier densities in p-and n-doped semiconductors. \(n\) is the electron density, given by: Question: 1. 001 ohm-cm for heavily doped n-type or p-type silicon, up to several thousand ohm-cm for lightly doped materials. Calculate Resistivity and Mobility Select the dopant and enter the dopant concentration: Dopant: Arsenic Boron Phosphorus Dopant Concentration: (cm-3) Feb 15, 1990 · We present a calculation of the temperature-dependent resistivity for heavily doped silicon and germanium. Intrinsic Silicon Properties - Michigan State University Problem 4 The resistivity ρ of doped silicon is based on the charge q on an electron, the electron density n, and the electron mobility μ. Silicon doped with Column V elements in known as p-type and the dopants are called donors. L. In addition to the contribution from impurity scattering, we include the contribution from electron-electron scattering, caused by the anisotropy of the conduction-band minima. 3E12 nΩ·m. Resistivity data for heavily doped p- and n-Si in [24] de-termined a hole concentration in the p–Si samples to be 3–6 1910 cm−3, while the electron concentration in the The electrical conductivity of n-type silicon depends on the doping concentration which varies from1022-1026/m3 at a given temperature 300 0 K where ionized impurity scattering is the dominant scattering mechanism. Ω⋅cm. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. For dopant densities less than 10 18 cm −3, results were calculated from resistivity and junction capacitance‐voltage measurements on The equilibrium resistivity. This process is called doping, which leads to the creation of mobile and conductive charge carriers in the material. Silicon Wafer Products; Silicon Wafer Services; Wafer Refurbishment Program (WRP) Tools. Amorphous boron doped p-type 10 nm thin silicon layer was grown at 200 C substrate temperature with silicide. However, it is believed that a uniform axial dopant profile can be efficiently obtained by adjusting furnace pressure to enhance phosphorus evaporation at the ingot top due to high saturated vapor pressure of phosphorus in molten silicon. Here are some common methods: Four-Point Probe Method: This technique measures the resistivity of the silicon substrate. They will change depending on the type and level of impurities in In this work we follow another approach: an analytical model is used to extract, from the calibrated SMM resistance image obtained from the S 11 measurements, resistivity and doping concentration of a doped silicon substrate. Number of silicon atoms=4. Mathematical fitting curve shows distribute themselves according to the local resistivity, with the effects being averaged over the thickness of the layer. Jan 1, 2022 · Among several competing technologies, contact passivation based on a stack of heavily doped polycrystalline silicon (poly-Si) and ultrathin silicon oxide (SiO x) films has received a particularly high level of interest and acceptance both in the PV research community and industry. 85°C (300°K). 3 ∙10³ Ω-m, respectively, at 26. For such resistors, a zero TCR can only be achieved with low resistivity polysilicon and an increased length of the resistor, which wastes valuable silicon area. M. The equilibrium resistivity. (See Callister Figures 19. 66 \times 10^{-4} \mathrm{~m}^3$ coulomb ${ }^{-1}$; the resistivity of the specimen is $8. Relation Resistivity-Mobility . Jun 8, 2023 · Silicon has a typical electron mobility of around 1,500 cm^2/Vs at room temperature. 84 104 m²/coulomb. The dopant concentration in every ingot charge was equal to C 0 = 4. 96 x 1022/cm3 Intrinsic carrier concentration=1. Semiconductor. 3. The other important process is scattering at phonons, which correspond to thermally stimulated lattice vibrations. (l From this, the range in resistivity was computed for different temperatures. Enter a number between Conductivity in semiconductors. Modules and Arrays Approx. Fermi level in Mar 15, 2020 · Various electrical measurements were performed over thermally evaporated Mg/Al contacts to investigate the conduction properties on both p-type and n-type silicon, where a Schottky behaviour was observed for the p doped silicon, but an ohmic behaviour (V ∝ I) for the n-type doped c-Si samples. These values are determined experimentally after a final anneal at l100"C for 20 min. Electrical resistivity and its converse, electrical conductivity, is a fundamental property of a material that quantifies how strongly it resists or conducts the flow of electric current. The doped p- and n-type Si samples were com-mercially obtained and had vendor specified resistivities of 0. Sep 1, 2006 · One of the key benefits of using polysilicon as the material for resistors and piezoresistors is that the temperature coefficient of resistivity (TCR) can be tailored to be negative, zero, or Doped silicon resistivity refers to how strongly doped silicon opposes the flow of electric current. Knowing that there are differ-ences between the laws controlling the mobility of the electrons and the holes, one can expect that the resistivity of this material shows different behaviour according to the doping type. Note: Calculations are for a silicon substrate. 3Ω·cm. Figure 16 shows the sheet resistance variation with doping concentration from 1. m or even lower. represented by equation (6) was computed with the use of standard techniques. Engineering conductivity through doping. Semiconductor n-type doping creates and fills new energy levels just below the … 9. 5~149000Ω/°C and resistivity of 2. 7. 014 -cm, respectively. If wafer is 400 µm thick and the probe spacing is 1 mm, determine the wafer resistivity and doping concentration. 135 m2/Volt-sec Hole Aug 16, 2022 · To calculate the radial resistance variation, we firstly should use the 2-probe method, 4-point probe method and others to test the resistivity of single crystal silicon. Derive the formula used. 6×10<sup>-3</sup>~4. Jul 23, 2024 · Silicon, as an intrinsic semiconductor, has a resistivity of about 2,300 Ω. 85 °C). 42) layer, using pulsed Ga source to modify the doping planes, exhibits a very high hole concentration of 8. Alternatively, boron can be substituted for silicon in the lattice, resulting in p-type doping, in which the majority carrier (hole) is positively charged. m. N(x) → ρ(x) = 1 qμN(x) Recall that since mobility depends on doping concentration, then mobility is also an implicit function of x! Jun 30, 2019 · the dependences of resistivity on the temperature and doping concentration should be considered separately. 2% respectively, all of which are able to capture neutrons and be transmuted. g 4 = 1 ⇡ ln sinh(t/ s) sinh(t/ 2s) = 1 ⇡ ln " sinh 0. 0018–0. Various Doping Concentrations in Silicon. 4mm/ 2mm) # =0. Because of this, the conductivity decreases in the extrinsic regime. It changes slowly at low dopant concentrations, but decreases rapidly at intermediate dopant concentrations. Mattis,andY. The computer that you use to view these slides probably will not exist without it. , it becomes an extrinsic semiconductor), the resistivity can drop to 10^-3 Ω. The resistivity data extend from 4° to 900°K, and the Hall data from 4° to 300°K. The calculator also allows users to determine the wafer doping concentration (Nb) from its doping density (N) at equilibrium. Oct 1, 2021 · The measurement of mechanical stability is an indispensable step before studying mechanical properties. Nov 5, 2001 · A zero TCR is possible, but only in the resistivity range of 100 to 300 Ω/ . My computer temperature probe usually indicates 40 to 65 C so that is what I'm taking as operating temperatures. 0–3. 93 \times 10^{-8}$ ohm m . 5. Boron segregation at grain boundaries is not observed for doping levels <10 1 9 May 18, 2020 · It can be obviously found in figure 15 that thin doped silicon membrane is vulnerable to temperature changes, and the maximum temperature of thin doped silicon membrane is slightly enhanced. Standards and Technology has issued three sets of silicon resistivity SRMs. Apr 11, 1988 · At doping concentrations <10 1 8 cm − 3, the resistivity is almost two orders of magnitude larger than that of crystalline silicon. The values calculated here use the same formula as PC1D to fit values given in 3 and 4 5 6. 20, 21, 26) On the May 1, 1988 · FIG. The resistivity of the samples with low doping concentrations (<2. Nov 13, 2020 · Electrical resistivity of Silicon is 2. This electron is easily broken loose to create a free electron. Resistivity Calculator; Acronyms; Connect. These sets designated 1521, 1522, and 1523, contained two, three, and two wafers, respectively, of 50. Draw an energy band diagram for a Silicon p+n junction. Lifetime as a function of doping is given on bulk lifetime. T Jan 1, 2012 · For example, the resistivity of in highly doped silicon increases with increasing temperature, due to the dominance of the scattering effect, and then decreases when the temperature is high enough To calculate silicon carrier concentration values, we use carrier mobility values derived from Thurber, Mattis, Liu, and Filliben, National Bureau of Standards Special Publication 400-64, The Relationship Between Resistivity and Dopant Density for Phosphorus-and Boron-Doped Silicon (May 1981), Table 10, Page 34 and Table 14, Page 40. By using phosphorus as an example, the existing expression for the static dielectric constant at low What will this change to, when the silicon is doped with a pentavalent impurity to the extent of one impurity atom for each 50 million of silicon atom? Following data may be used. The carrier concentrations were determined from Hall measurements made at 300' K. Enter a number between 0. Jan 21, 2022 · The Hall coefficient of a specimen of doped silicon is found to be $3. Resistivity, \(\rho\), is calculated using the formula: \[\rho = \frac{1}{q n \mu}\] where: \(q\) is the charge of an electron. Figure 10 shows the EDX spectra of undoped and phosphorus doped silicon wafers and table 4 includes the summary of atomic composition of B, O, Si, and P. 13 and 19. Assume electron mobility 1400 cm2 V−1 s−1. 14). 3 × 1018 cm-3, which is 67% higher than that of the What are the values of potentials in N-doped and P-doped semiconductors ?? N-doped Semiconductors (doping density is Nd): no x Nd The potential in n-doped semiconductors is denoted by: n i d n KT q x d i n N q KT N n e n log P-doped Semiconductors (doping density is Na): po x Na The potential in p-doped semiconductors is denoted by: p Sep 1, 1978 · The extension of the present work to higher dopant densities and lower temperatures is highly desirable. 1 × 1018 cm−3) was presented. May 10, 2019 · In this work, EDS analysis has been carried out to estimate the number of phosphorus atoms doped into the silicon wafers with different doping time. Dopant species. At high dopant concentrations it approaches the re sistivity of single-crystal silicon. Dopant: Arsenic Boron Phosphorus Impurity Concentration: (cm-3) Mobility: [cm 2 /V-s] Resistivity: [Ω-cm] Carrier concentrations and direct-current resistivity of the silicon were also mea- sured. 0015 Ω cm) substrate is selected because its optical constants satisfy the non-metallic requirement within the whole Aug 1, 2001 · The electrical properties and the long-term stability of the resistivity have been studied for boron-doped polysilicon films additionally implanted with fluorine. Silicon has three stable isotopes, silicon-28, silicon-29, and silicon-30, of abundance at 92. The silicon is known as n-type and the dopants are called Dec 1, 2022 · The feedstock in all experiments was doped with equal quantity of doping material (highly phosphorous-doped silicon) in order to ensure identical phosphorus concentration at the start of the process. The expression of a silicon resistance according to the temperature . 5 × 10 15 cm −3 , which according to Gulliver-Scheil equation must result Generally, the mobilities decrease with increasing temperature and doping concentration. 4×10<sup>20</sup>cm<sup>-3</sup>) and various annealing conditions (950~1050°C, 10-30mins), which results in sheet resistance of 89. This Practice describes conversions between dopant density and resistivity for arsenic-, boron- and phosphorus- doped single crystal silicon and conversions from resistivity to carrier density for boron- and phosphorus doped single crystal silicon at 23°C. 0 × 10 18 cm −3 . Nov 23, 2010 · This study was undertaken in order to elucidate if resistivity measurements can be used to estimate the net doping density in materials with dopant densities characteristic for compensated solar cell silicon. 1 Introduction Heavily doped regions are present in every semiconductor device of practical inter-est today. Figure 5. 1: The resistivity of poly silicon is much greater than that of similarly doped, single-crystal, epitaxial silicon. 5x10(15) and 5x10(19) cm(-3).
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